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Photovoltaic properties of CU2O/CuxS heterojunction

Authors:

W. Siripala ,

University of Kelaniya, Kelaniya, LK
About W.
Department of Physics
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K. P. Kumara

University of Kelaniya, Kelaniya, LK
About K. P.
Department of Physics
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Abstract

A simple electrochemical method was developed to fabricate a Cu2O/CuxS heterojunction and it was then used in preparing a thin film photovoltaic solar cell. Cu2O was prepared by the method of electrodeposition and CuxS was coated on Cu2O by a simple dipping method. The photovoltaic properties of the cell could be improved significantly by heat treatment in air. The maximum conversion efficiency of the cell was 0.1% and VOC = 180 mV and Isc = 2.O mA/cm2 under A M 1 artificial illumination.
How to Cite: Siripala, W. and Kumara, K.P., 1990. Photovoltaic properties of CU2O/CuxS heterojunction. Journal of the National Science Foundation of Sri Lanka, 18(2), pp.109–117. DOI: http://doi.org/10.4038/jnsfsr.v18i2.8197
Published on 30 Dec 1990.
Peer Reviewed

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